- Strategic Partnership: Navitas Semiconductor has launched new power products specifically designed for Nvidia’s advanced 800 VDC AI factory architecture.
- Advanced Technology: The new product lineup includes cutting-edge 100 V Gallium Nitride (GaN) FETs, 650 V GaN devices, and high-voltage Silicon Carbide (SiC) technology.
- Performance Boost for AI: These components are engineered to deliver significant improvements in efficiency, power density, and thermal performance for large-scale AI systems.
- Market Impact: The move positions Navitas as a key supplier in the rapidly growing AI hardware ecosystem, directly supporting next-generation infrastructures like Nvidia’s Rubin Ultra.
NVTS Powers Next-Gen AI Revolution
In a significant development for the artificial intelligence hardware sector, Navitas Semiconductor Corporation (NASDAQ: NVTS) has announced the release of new power semiconductor products. These components are not just general-purpose chips; they are purpose-built to power Nvidia’s formidable 800 VDC AI factory architecture, signaling a major validation of Navitas’s technology in the high-stakes AI arena.
Tailored for Nvidia’s AI Factories
The collaboration centers on providing the foundational power components for Nvidia’s new power distribution system, a critical element for running massive, high-performance AI workloads. This system is designed to directly power IT racks that form the backbone of infrastructures like the upcoming Nvidia Rubin Ultra platform.
Navitas’s management emphasized that these new products are engineered to achieve breakthrough efficiency, enhance overall performance, and increase power density—three critical metrics for data centers where every watt and every square inch of space counts. As AI models become more complex and power-hungry, the demand for more efficient power solutions has become paramount.
A Portfolio of Advanced Power Solutions
The announcement spotlights a diverse range of new technologies from Navitas, each playing a crucial role in supporting Nvidia’s shift to the more efficient 800 VDC standard:
- 100 V GaN FETs: This new portfolio is set to provide superior efficiency and thermal performance, allowing for more compact and powerful AI systems.
- 650 V GaN Portfolio: Featuring high-power GaN FETs and GaNSafe power ICs, this line integrates key functions like drive, control, sensing, and protection. This integration simplifies design and improves reliability for Nvidia’s AI factory infrastructure.
- High-Voltage SiC Devices: Silicon Carbide technology is known for its ability to handle high voltages and temperatures, making it ideal for the demanding environment of an AI data center.
The Core Technology: GaN and SiC
Navitas Semiconductor specializes in designing and manufacturing integrated circuits based on Gallium Nitride (GaN) and Silicon Carbide (SiC). These next-generation materials offer significant advantages over traditional silicon, including faster switching speeds, higher power efficiency, and smaller form factors. By leveraging these materials, Navitas is providing the essential building blocks needed to power the exponential growth in AI computing, ensuring that the next wave of innovation has a stable and efficient power foundation.